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AT26DF081A
12.5
Program and Erase Characteristics
Symbol
t PP (1)
t BP
Parameter
Page Program Time (256 Bytes)
Byte Program Time
Min
Typ
1.2
7
Max
5
Units
ms
μs
4 Kbytes
50
200
t BLKE (1)
Block Erase Time
32 Kbytes
250
600
ms
64 Kbytes
400
950
t CHPE
(2)
Chip Erase Time
6
14
sec
t WRSR
(2)
Write Status Register Time
200
ns
Notes:
12.6
1. Maximum values indicate worst-case performance after 100,000 erase/program cycles.
2. Not 100% tested (value guaranteed by design and characterization).
Power-up Conditions
Parameter
Min
Max
Units
Minimum V CC to Chip Select Low Time
Power-up Device Delay Before Program or Erase Allowed
50
10
μs
ms
Power-on Reset Voltage
12.7
Input Test Waveforms and Measurement Levels
1.5
2.5
V
12.8
AC
DRIVING
LEVELS
t R , t F < 2 ns (10% to 90%)
Output Test Load
2.4V
0.45V
1.5V
AC
MEASUREMENT
LEVEL
DEVICE
UNDER
TEST
30 pF
33
3600G–DFLASH–06/09
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